2008 Hitachi SU-70

Process Type: FA SEMs/TEMs/Dual Beams

Wafer Size: N//A

Date of Manufacture: 2008

Equipment Information:

Status of Equipment: Refurbished

Resolution Imaging; 1 nm/15 kV, 1.6 nm/1 kV

In-lens SE and BSE Signal Filtering and Mixing Mode

Maximum Probe Current of 100 nA or Greater Available with the Schottky Electron Source for optional EDX, WDS, EBSP, CL and e-beam lithography 

Imaging.

1.0nm at 15kV WD 4mm

1.6nm at 1kV 1.5mm deceleration mode

2.5nm at 1kV 1.5nm standard mode

Magnification:

Low Mag mode: 25 – 2,000x

High Mag mode: 100- 800,000x

Electron Optics:

ZrO/W Schottky emission

Probe current >200nA at 30kV

Specimen Stage:

5 Axis motorization, X: 110mm, Y: 110mm, Z: 1.5 – 40mm, T: -5 to +70, R: 360 deg

150 mm Load Lock