STS Multiplex AOE ICP Etch System

Installed and in working condition

Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon

Substrates- Small pieces- one 150mm wafer

Masks: Si, PR &Metals (Cr, Ti, Ni)

Gases: C4F8, SF6, O2, H2, CF4, two open gas slots

Process pressure: 2-80mT

Temperatures- Platen -20degC to 120degC, walls 100degC, Lid 120degC

Components- reaction chamber, loadlock, throttle valve, pressure guge, MFCs, turbo pump, mechanical pump, chillers