1996 KLA KLA-5100XP
1996 KLA KLA-5100XP
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Available quantity:2
Description
Wafer Size (6'', 8'', 12'', …) 8"
Process Superposition measuring device
Location Warehouse or Clean Room Warehouse
Status Clean Room Options: Running production, Idle, Decontaminated, Decomissioned
Warehouse Options: Unpacked, Packed, Crated Packed
Condition Working Tool or Not Working Tool?
If not working, when last time was working? Not working
Last time of working: 17-Jun-20
Not Working Tool What is broken
Approximate cost to repair
Missing Parts (pls itemize in seperate worksheet) No missing parts.
KLA-5100 (Superposition measuring device)
Inspection Station Alignment system: KLAASP automatic alignment system
Stage system: 2-stage high-precision stage (piezo crystal control)
Focus system: 2-stage Z-axis operation (piezo crystal control)
Optics: LINNIK optics
Wafer Loader Systems Transport system: 2 cassette loader / unloader -
Pre-alignment: OF detection function
Control Console Menu Terminal
Image Display Terminal
KLA-5501 Analysis Station
DEC VLC4000
16MB RAM
320/525MB QIC tape drive
3.5inch F.D.drive(IBM PC 互換 1.44M)
option KLASS III Software Package
Image Hard Copy
Printer (LA75 equivalent)
SECS Software
26-wafer compatible option
Patlite
2GB Hard Disk
Library Setup
Wafer Size Wafer Diameter (mm): 200
Wafer thickness (μm): 725
Wafer Pattern For orifura, the pattern is aligned within 2°
For wafer sizes of 100 mm or more, 9 patterns are attached to at least 82 mm in both X and Y directions.
At least two or more chips are exposed in the Y direction
Die Size Minimum 3 mm, maximum 50 mm (one side)
Wafer Conveyance Capable of processing 2 SEMI standard 25-piece cassettes
Measurement wafer designation is randomly programmable
Wafer Alignment Fully automatic non-contact alignment method that does not require special alignment targets
Targets for superposition accuracy measurement (1) Concentric box-type targets
(2) The outer target is 15μm or more and 30μm or less (recommended size: 20μm)
(3) The inner target is about 1/2 the size of the outer target
(4) The angle of inclination of the edge of the target is 80~90°
Measurement accuracy (using KLA Stsdard Wafer) Repeatability (3 sigma) 5 nm or less (when superposition error 2 μm or less)
TIS (Tool Induced Shift) (using KLA Standard Wefer) The TIS value measured by the following equation is 5 nm or less.
TIS=(X0+X180)/2 TISY(Y0+Y180)/2
The average of X and Y superposition deviations is X0 and Y0, respectively. The average of X and Y superposition deviations measured by rotating the wafer 180 ° is X180 and Y180, respectively.
Measurement throughput 85 or more sheets per hour (when measuring 5 points in the wafer plane)
data processing Various statistical calculations and graphic display are possible
Utility
power 50/60Hz AC200V 20A Single Phase 1 System
100V AC 20A Single Phase 1 System 4pcs for Monitor/Printer/Maintenance
Clean dry air or dry N2 (dew point -40°C, 2μm filter required) 1 piece for KLA-5100
Flow rate: 84.9l/min, pressure 603kg/cm2~7.7kg/cm2 1/4 inch tube
vacuum 3 pcs for KLA-5100
Vacuum: 635mmHg, Flow rate: 28.3l/min 1/4 inch tube
exhaust 1 4.5inch (115mm) Φ duct system
Flow rate: 250cfm (7m3/min or more)
Temperature environment 19°C~25°C Fluctuation of ambient temperature of equipment ±0.8°C
vibration Attached Vibration chart reference
KLA5100
Inspection Station 1340mm(W)×1200mm(D)×1700mm(H) 1000kg
Control Console 560mm(W)×900mm(D)×2000mm(H) 80kg
Line Conditioner 310mm(W)×550mm(D)×270mm(H) 50kg
Specifications
Manufacturer | KLA |
Model | KLA-5100XP |
Year | 1996 |
Condition | Used |
Stock Number | BM4762 |