1996 KLA KLA-5100XP

1996 KLA KLA-5100XP

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Description

Wafer Size (6'', 8'', 12'', …) 8"

Process Superposition measuring device

Location Warehouse or Clean Room Warehouse

Status Clean Room Options: Running production, Idle, Decontaminated, Decomissioned

Warehouse Options: Unpacked, Packed, Crated Packed

Condition Working Tool or Not Working Tool?

If not working, when last time was working? Not working

Last time of working: 17-Jun-20

Not Working Tool What is broken

Approximate cost to repair

Missing Parts (pls itemize in seperate worksheet) No missing parts.


KLA-5100 (Superposition measuring device)

Inspection Station Alignment system: KLAASP automatic alignment system

Stage system: 2-stage high-precision stage (piezo crystal control)

Focus system: 2-stage Z-axis operation (piezo crystal control)

Optics: LINNIK optics


Wafer Loader Systems Transport system: 2 cassette loader / unloader -

Pre-alignment: OF detection function


Control Console Menu Terminal

Image Display Terminal

KLA-5501 Analysis Station


DEC VLC4000

16MB RAM

320/525MB QIC tape drive

3.5inch F.D.drive(IBM PC 互換 1.44M)


option KLASS III Software Package

Image Hard Copy

Printer (LA75 equivalent)

SECS Software

26-wafer compatible option

Patlite

2GB Hard Disk

Library Setup



Wafer Size Wafer Diameter (mm): 200

Wafer thickness (μm): 725


Wafer Pattern For orifura, the pattern is aligned within 2°

For wafer sizes of 100 mm or more, 9 patterns are attached to at least 82 mm in both X and Y directions.

At least two or more chips are exposed in the Y direction


Die Size Minimum 3 mm, maximum 50 mm (one side)


Wafer Conveyance Capable of processing 2 SEMI standard 25-piece cassettes

Measurement wafer designation is randomly programmable


Wafer Alignment Fully automatic non-contact alignment method that does not require special alignment targets


Targets for superposition accuracy measurement (1) Concentric box-type targets

(2) The outer target is 15μm or more and 30μm or less (recommended size: 20μm)

(3) The inner target is about 1/2 the size of the outer target

(4) The angle of inclination of the edge of the target is 80~90°


Measurement accuracy (using KLA Stsdard Wafer) Repeatability (3 sigma) 5 nm or less (when superposition error 2 μm or less)


TIS (Tool Induced Shift) (using KLA Standard Wefer) The TIS value measured by the following equation is 5 nm or less.

TIS=(X0+X180)/2 TISY(Y0+Y180)/2

The average of X and Y superposition deviations is X0 and Y0, respectively. The average of X and Y superposition deviations measured by rotating the wafer 180 ° is X180 and Y180, respectively.


Measurement throughput 85 or more sheets per hour (when measuring 5 points in the wafer plane)


data processing Various statistical calculations and graphic display are possible


Utility

power 50/60Hz AC200V 20A Single Phase 1 System

100V AC 20A Single Phase 1 System 4pcs for Monitor/Printer/Maintenance


Clean dry air or dry N2 (dew point -40°C, 2μm filter required) 1 piece for KLA-5100

Flow rate: 84.9l/min, pressure 603kg/cm2~7.7kg/cm2 1/4 inch tube


vacuum 3 pcs for KLA-5100

Vacuum: 635mmHg, Flow rate: 28.3l/min 1/4 inch tube


exhaust 1 4.5inch (115mm) Φ duct system

Flow rate: 250cfm (7m3/min or more)


Temperature environment 19°C~25°C Fluctuation of ambient temperature of equipment ±0.8°C


vibration Attached Vibration chart reference





KLA5100

Inspection Station 1340mm(W)×1200mm(D)×1700mm(H) 1000kg

Control Console 560mm(W)×900mm(D)×2000mm(H) 80kg

Line Conditioner 310mm(W)×550mm(D)×270mm(H) 50kg

Specifications

ManufacturerKLA
ModelKLA-5100XP
Year1996
ConditionUsed
Stock NumberBM4762