Plasmalab 100 PECVD

150 mm and 200 mm De-installed, warehoused. Can be inspected by appointment. Used for SiN processing. A) Wafer size:6"~ 8" silicon wafer B) Temperature:< 390 °C C) For SiN X film: a) deposition rate:>600 A/min b) film stress:<+- 300 MPa c) uniformity:<10% D) For SiO X film: a) deposition rate:>2000 A/min b) film stress:<+- 300 MPa c) uniformity:<10% Includes the following pumps: Alcatel 2015C2 qty 2 Alcatel ADS602P qty 1 Leybold D16BCS qty 1